feb.1999 mitsubishi semiconductor triac ? BCR16PM medium power use insulated type, planar passivation type application contactless ac switches, light dimmer, electric flasher unit, hair drier, control of household equipment such as tv sets refrigerator washing machine electric fan, other general purpose control applications BCR16PM ?i t (rms) ...................................................................... 16a ?v drm ..............................................................400v/600v ?i fgt ! , i rgt ! , i rgt # ......................... 30ma (20ma) ] 5 ?v iso ........................................................................ 1500v ? ul recognized: file no. e80276 ] 1. gate open. symbol i t (rms) i tsm i 2 t p gm p g (av) v gm i gm t j t stg v iso parameter rms on-state current surge on-state current i 2 t for fusing peak gate power dissipation average gate power dissipation peak gate voltage peak gate current junction temperature storage temperature weight isolation voltage conditions commercial power frequency, sine full wave 360 conduction, t c =71 c 60hz sinewave 1 full cycle, peak value, non-repetitive value corresponding to 1 cycle of half wave 60hz, surge on-state current typical value t a =25 c, ac 1 minute, t 1 t 2 g terminal to case unit a a a 2 s w w v a c c g v ratings 16 160 107.5 5.0 0.5 10 2 C40 ~ +125 C40 ~ +125 2.0 1500 symbol v drm v dsm parameter repetitive peak off-state voltage ] 1 non-repetitive peak off-state voltage ] 1 voltage class unit v v maximum ratings 8 400 500 12 600 720 outline drawing dimensions in mm to-220f type name voltage class f 3.2?.2 1.3 max 0.8 2.54 13.5 min 3.6 5.0 1.2 8.5 10.5 max 5.2 4.5 23 1 2 1 3 1
2
3 t 1 terminal t 2 terminal gate terminal 17 2.54 2.8 0.5 2.6 * measurement point of case temperature
feb.1999 10 0 23 5710 1 80 40 23 5710 2 44 120 160 200 60 20 100 140 180 0 4.4 0.4 1.2 2.4 3.2 0.8 1.6 2.0 2.8 3.6 4.0 10 3 7 5 3 2 10 2 7 5 3 2 10 1 7 5 3 2 10 0 t j = 125? t j = 25? maximum on-state characteristics on-state current (a) on-state voltage (v) rated surge on-state current surge on-state current (a) conduction time (cycles at 60hz) mitsubishi semiconductor triac ? BCR16PM medium power use insulated type, planar passivation type ] 2. measurement using the gate trigger characteristics measurement circuit. ] 3. the critical-rate of rise of the off-state commutating voltage is shown in the table below. ] 4. the contact thermal resistance r th (c-f) in case of greasing is 0.5 c/w. ] 5. high sensitivity (i gt 20ma) is also available. (i gt item 1 ) test conditions voltage class 8 12 v drm (v) 400 600 min. 10 10 commutating voltage and current waveforms (inductive load) (dv/dt) c symbol r l r l unit v/ m s 1. junction temperature t j =125 c 2. rate of decay of on-state commutat- ing current (di/dt) c =C8a/ms 3. peak off-state voltage v d =400v symbol i drm v tm v fgt ! v rgt ! v rgt # i fgt ! i rgt ! i rgt # v gd r th (j-c) (dv/dt) c parameter repetitive peak off-state current on-state voltage gate trigger voltage ] 2 gate trigger current ] 2 gate non-trigger voltage thermal resistance critical-rate of rise of off-state commutating voltage test conditions t j =125 c, v drm applied t c =25 c, i tm =25a, instantaneous measurement t j =25 c, v d =6v, r l =6 w , r g =330 w t j =25 c, v d =6v, r l =6 w , r g =330 w t j =125 c, v d =1/2v drm junction to case ] 4 unit ma v v v v ma ma ma v c/w v/ m s typ. ! @ # ! @ # electrical characteristics limits min. 0.2 ] 3 max. 2.0 1.5 1.5 1.5 1.5 30 ] 5 30 ] 5 30 ] 5 3.0 supply voltage time time time main current main voltage (di/dt)c v d (dv/dt)c performance curves
feb.1999 10 0 23 10 1 5710 2 23 5710 3 23 5710 4 3 2 10 1 7 5 3 2 7 5 7 5 3 2 10 ? v gd = 0.2v p gm = 5w p g(av) = 0.5w v gm = 10v v gt = 1.5v i gm = 2a i fgt i, i rgt i, i rgt iii 23 10 ? 5710 0 23 5710 1 23 5710 2 3.5 4.0 4.5 3.0 2.5 2.0 1.5 1.0 0.5 5.0 0 23 10 2 5710 3 23 10 1 10 3 7 5 3 2 ?0 ?0 20 10 2 7 5 3 2 60 100 140 4 4 ?0 0 40 80 120 typical example 10 1 10 3 7 5 3 2 ?0 ?0 20 10 2 7 5 3 2 60 100 140 4 4 ?0 0 40 80 120 i fgt i, i rgt i i rgt iii typical example maximum on-state power dissipation on-state power dissipation (w) rms on-state current (a) maximum transient thermal impedance characteristics (junction to case) transient thermal impedance (?/ w) conduction time (cycles at 60hz) gate voltage (v) gate current (ma) gate trigger current vs. junction temperature junction temperature (?) gate trigger voltage vs. junction temperature junction temperature (?) maximum transient thermal impedance characteristics (junction to ambient) transient thermal impedance (?/ w) conduction time (cycles at 60hz) 10 3 10 ? 10 3 10 4 10 2 7 5 3 2 10 0 7 5 3 2 10 1 7 5 3 2 7 5 3 2 10 1 23 57 23 57 10 2 10 5 23 57 23 57 no fins 40 30 15 10 5 35 25 20 0 20 0 24 8 6 1012141618 360 conduction resistive, inductive loads gate characteristics 100 (%) gate trigger current (t j = t?) gate trigger current (t j = 25?) 100 (%) gate trigger voltage ( t j = t c ) gate trigger voltage ( t j = 25 ? ) mitsubishi semiconductor triac ? BCR16PM medium power use insulated type, planar passivation type
feb.1999 laching current vs. junction temperature laching current (ma) junction temperature (?) allowable ambient temperature vs. rms on-state current ambient temperature (?) rms on-state current (a) repetitive peak off-state current vs. junction temperature junction temperature (?) 140 40 ?0 ?0 ?0 0 20 60 80 100 120 10 5 7 5 3 2 10 4 7 5 3 2 10 3 7 5 3 2 10 2 typical example 10 3 7 5 3 2 ?0 ?0 20 10 2 7 5 3 2 60 100 140 4 4 ?0 0 40 80 120 10 1 typical example 160 120 100 60 20 0 20 16 18 0 2 6 10 14 40 80 140 4812 curves apply regardless of conduction angle 360 conduction resistive, inductive loads allowable case temperature vs. rms on-state current case temperature (?) rms on-state current (a) holding current vs. junction temperature junction temperature (?) 160 120 100 60 20 0 3.2 0 0.4 1.2 2.0 2.8 40 80 140 0.8 1.6 2.4 natural convection no fins curves apply regardless of conduction angle resistive, inductive loads 160 ?0 0 40 80 120 10 3 7 5 3 2 10 2 7 5 3 2 10 1 7 5 3 2 10 0 t 2 + , g e typical example t 2 + , g + t 2 e , g e y t typical example distribution 160 100 80 40 20 0 140 40 ?0 ?0 ?0 0 20 60 80 140 100120 60 120 typical example breakover voltage vs. junction temperature junction temperature (?) 100 (%) holding current ( t j = t c ) holding current ( t j = 25 ? ) 100 (%) repetitive peak off-state current ( t j = t c ) repetitive peak off-state current ( t j = 25 ? ) 100 (%) breakover voltage ( t j = t c ) breakover voltage ( t j = 25 ? ) mitsubishi semiconductor triac ? BCR16PM medium power use insulated type, planar passivation type
feb.1999 commutation characteristics critical rate of rise of off-state commutating voltage (v/?) rate of decay of on-state commutating current (a /ms) breakover voltage vs. rate of rise of off-state voltage rate of rise of off-state voltage (v/?) 100 (%) breakover voltage ( dv/dt = xv/? ) breakover voltage ( dv/dt = 1v/? ) gate trigger current vs. gate current pulse width gate current pulse width (?) 100 (%) gate trigger current ( tw ) gate trigger current ( dc ) 10 1 10 3 7 5 3 2 10 0 23 5710 1 10 2 7 5 3 2 23 5710 2 4 4 44 i rgt iii i rgt i i fgt i typical example 23 10 1 5710 2 23 5710 3 23 5710 4 120 0 20 40 60 80 100 140 160 # 2 # 1 typical example t j = 125? i quadrant iii quadrant 10 1 23 10 0 5710 1 23 5710 2 23 5710 3 3 2 10 2 7 5 3 2 7 5 7 5 3 2 10 0 typical example t j = 125? i t = 4a t = 500? v d = 200v f = 3hz i quadrant iii quadrant minimum charac- teristics value voltage waveform current waveform v d t (dv/dt) c i t t t (di/dt) c mitsubishi semiconductor triac ? BCR16PM medium power use insulated type, planar passivation type 6 w 6 w 6 w 6v 6v 6v r g r g r g a v a v a v test procedure 1 test procedure 3 test procedure 2 gate trigger characteristics test circuits
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